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| (R) T4016XKS SNUBBERLESS TRIACS FEATURES IT(RMS) = 40A HIGH COMMUTATION : (dl/dt)c 22A/ms INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The T4016XKS series of isolated triacs uses a high performance MESA GLASS technology. The SNUBBERLESSTM concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. A1 A2 G RD107 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Tc= 75C tp = 8.3 ms tp = 10 ms I2 t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Value 40 330 300 450 20 100 - 40 to + 125 - 40 to + 125 260 C C A2s A/s Unit A A Symbol VDRM VRRM April 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 T4016XKS THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Parameter Junction to case for D.C Junction to case for A.C 360 conduction angle (F=50Hz) Value 1.2 0.9 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Quadrant I-II-III MIN MAX VGT VGD tgt VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IT = 56A IG = 500mA dIG/dt = 3A/s IT= 250mA Gate open IG= 1.2 IGT Tj= 25C Tj= 125C Tj= 25C I-II-III I-II-III I-II-III MAX MIN TYP Sensitivity 16 2 50 1.5 0.2 2 V V s mA Unit IGM = 4 A (tp = 20 s) IH * IL Tj= 25C Tj= 25C I-III II MAX TYP TYP MAX MAX MAX MIN MIN TYP 50 50 100 1.7 10 3 750 22 44 V A mA V/s A/ms mA VTM * IDRM IRRM dV/dt * (dl/dt)c * ITM= 56A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open Without snubber Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION T TRIAC MESA GLASS CURRENT 2/5 40 16 SENSITIVITY M KS PACKAGE : KS = RD107 Insulated VOLTAGE (R) T4016XKS Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) Tcase (o C) Rth = 0 o C/W 0.5 o C/W o 1 C/W 1.5 o C/W 60 50 40 30 20 10 60 = 180 = 120 = 90 o o o o -75 -85 -95 -105 -115 50 40 30 20 10 Tamb (oC) = 60 = 30 o I T(RMS) (A) 0 0 5 10 15 20 25 30 35 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 -125 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1 50 40 30 20 10 = 180 o 0.1 Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 o tp (s) 1 E+1 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 300 Tj initial = 25 C o 250 200 150 Ih 100 50 Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 (R) T4016XKS Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) 1000 I2 t I TSM Tj initial = 25oC 1000 Tj initial o 25 C 100 100 10 Tj max Tj max Vto =1.06 V Rt =0.01 tp(ms) VTM (V) 10 1 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4/5 (R) T4016XKS PACKAGE MECHANICAL DATA RD 107(Plastic) G a2 H REF. DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. 40.0 29.9 30.3 22.0 27.0 24.0 14.0 3.5 1.95 3.0 0.75 0.85 4.0 4.5 0.45 0.55 6.2 4.7 9.5 11.35 1.4 1.6 6.3 4.8 11.7 0.446 0.551 0.630 1.575 1.177 1.193 0.867 1.063 0.945 0.552 0.138 0.767 0.118 0.029 0.033 0.157 0.177 0.018 0.022 0.244 0.248 0.185 0.189 0.374 0.461 L A a1 b1 C c2 a1 c1 a2 B b1 C c1 c2 E F J I E K A Marking : type number Weight : 20g B F G H I J K L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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